32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon.

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at -1V, 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Characterization of a fully integrated heterogeneous silicon/III-V colliding pulse mode-locked laser with on-chip feedback.

A fully integrated heterogeneous silicon/III-V colliding pulse mode-locked laser with tunable on-chip optical feedback operating in the O-band is extensively investigated. The 19-GHz colliding pulsed laser operates in a wide mode-locking regime with good mode locking quality. By precisely controlling the strength and phase of the on-chip optical feedback signal, the laser exhibits clear periodic pulse shortening effects. The RF 3 dB linewidth was reduced by a factor of 4.7 down to 6 kHz, as compared to the free running state.

Stabilization of heterogeneous silicon lasers using Pound-Drever-Hall locking to Si3N4 ring resonators.

Recent results on heterogeneous Si/III-V lasers and ultra-high Q Si3N4 resonators are implemented in a Pound-Drever-Hall frequency stabilization system to yield narrow linewidth characteristics for a stable on-chip laser reference. The high frequency filtering is performed with Si resonant mirrors in the laser cavity. To suppress close in noise and frequency walk off, the laser is locked to an ultra-high Q Si3N4 resonator with a 30 million quality factor. The laser shows high frequency noise levels of 60 × 103 Hz2/Hz corresponding to 160 kHz linewidth, and the low frequency noise is suppressed 33 dB to 103 Hz2/Hz with the PDH system.

Compact Tb doped fiber optic current sensor with high sensitivity.

A highly sensitive fiber optic current sensor using terbium doped fiber is presented. The Verdet constant of the terbium doped fiber at 1300nm is found to be 19.5µrad/A using both a polarimetric and interferometric type sensor. Measurements on a Sagnac-loop sensor using 10cm of terbium doped fiber placed inside a solenoid show over 40dB of open loop dynamic range as well as a minimum detectable current of 0.1mA. Extrapolations of our measurements show that in a practical setup with Tb fiber wrapped around a current carrying wire, the optimal configuration is a 0.5m piece of Tb fiber with a noise limit of 22mA/√Hz. This sensor is promising for current sensing applications that require high sensitivity and small size, weight, and power.

Low kappa, narrow bandwidth Si(3)N(4) Bragg gratings.

We investigate three approaches to low perturbation gratings to achieve lower linewidths in filters and semiconductor lasers. The three designs, which are labeled post, sampled, and high order, are DUV lithography compatible and were fabricated on 90 nm thick Si(3)N(4) strip waveguides. Reflection and transmission spectra measurements show coupling constant, kappa, values ranging from 0.23 cm(­1) to 1.2 cm(­1) with FWHM values of 74 pm to 116 pm. We discuss the tradeoffs between these geometries in terms of lowest linewidth, apodization, and curved waveguide layout. These results enable long cavity single mode lasers with kHz level linewidths on a monolithic platform.

Design of integrated hybrid silicon waveguide optical gyroscope.

We propose and analyze a novel highly integrated optical gyroscope using low loss silicon nitride waveguides. By integrating the active optical components on chip, we show the possibility of reaching a detection limit on the order of 19°/hr/√Hz in an area smaller than 10 cm(2). This study examines a number of parameters, including the dependence of sensitivity on sensor area.

Athermal laser design.

This paper discusses circuit based and waveguide based athermalization schemes and provides some design examples of athermalized lasers utilizing fully integrated athermal components as an alternative to power hungry thermo-electric controllers (TECs), off-chip wavelength lockers or monitors with lookup tables for tunable lasers. This class of solutions is important for uncooled transmitters on silicon.

Low threshold and high speed short cavity distributed feedback hybrid silicon lasers.

In this paper we investigate reducing threshold and improving the efficiency and speed of distributed feedback hybrid silicon lasers. A low threshold current of 8.8 mA was achieved for a 200 µm cavity at 20 °C. A 3 dB bandwidth of 9.5 GHz as well as 12.5 Gb/s direct modulation of DFB laser diode was achieved on the hybrid silicon platform for the first time.

Design of phase-shifted hybrid silicon distributed feedback lasers.

We present data on the design and performance analysis of phase shifted distributed feedback (DFB) lasers on the hybrid silicon platform. The lasing wavelength for various input currents and temperatures, for devices with standard quarter-wavelength, 60 µm and 120 µm-long phase shift are compared for mode stability and output power. The pros and cons of including a large phase shift region in the grating design are analyzed.